2 records found.
High Doping Activation (≥1020 cm−3) in Tensile-Strained n‑Ge Alloys Achieved by High-Speed Continuous-Wave Laser Annealing
- Journal article
- Creator
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Rahmat Hadi Saputro (author) (Search by this author)Research Center for Materials Nanoarchitectonics (MANA)/Quantum Materials Field/Nanostructured Semiconducting Materials Group, National Institute for Materials Science
;
;Tatsuro Maeda (author) (Search by this author)AIST;Kaoru Toko (author) (Search by this author)Graduate School of Pure and Applied Sciences University of TsukubaRyo Matsumura (author) (Search by this author)Research Center for Materials Nanoarchitectonics (MANA)/Quantum Materials Field/Nanostructured Semiconducting Materials Group, National Institute for Materials Science
;
Naoki Fukata (author) (Search by this author)Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science
- Keyword
- germanium, thin film, polycrystalline growth, laser annealing, impurity doping
- Date published
- 2024-06-25
- Updated at
- 2025-06-03 08:30:17 +0900
In situ Transmission Electron Microscopy Observation of Melted Germanium Encapsulated in Multilayer Graphene
- Journal article
- Creator
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Seiya Suzuki (author) (Search by this author)Advanced Science Research Center (ASRC), Japan Atomic Energy Agency (JAEA)
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;Yoshihiro Nemoto (author) (Search by this author)Electron Microscopy Analysis Station, National Institute for Materials Science (NIMS);Natsumi Shiiki (author) (Search by this author)International Center for Young Scientists (ICYS), National Institute for Materials Science (NIMS);Yoshiko Nakayama (author) (Search by this author)Electron Microscopy Analysis Station, National Institute for Materials Science (NIMS)Masaki Takeguchi (author) (Search by this author)Electron Microscopy Analysis Station, National Institute for Materials Science (NIMS)
- Keyword
- crystal growth, germanene, germanium, in situ heating measurement, interfaces
- Date published
- 2023-06-29
- Updated at
- 2024-06-29 08:30:27 +0900