Seiya Suzuki
(Advanced Science Research Center (ASRC), Japan Atomic Energy Agency (JAEA))
;
Yoshihiro Nemoto
(Electron Microscopy Analysis Station, National Institute for Materials Science (NIMS))
;
Natsumi Shiiki
(International Center for Young Scientists (ICYS), National Institute for Materials Science (NIMS))
;
Yoshiko Nakayama
(Electron Microscopy Analysis Station, National Institute for Materials Science (NIMS))
;
Masaki Takeguchi
(Electron Microscopy Analysis Station, National Institute for Materials Science (NIMS))
説明:
(abstract)A graphene/Ge/graphene encapsulated structure was fabricatead. In situ heating TEM revealed that Ge like droplets moved and coalesced with other Ge droplets, indicating that Ge remained as a liquid phase between graphene layers at temperatures higher than the Ge melting point. It was also observed that droplet Ge incorporates the surrounding amorphous Ge as Ge nuclei, thereby increasing its size (domain growth). These results indicated that Ge crystals can be grown at the interface of van der Waals materials, which will be important for future germanene growth at solid interfaces.
権利情報:
キーワード: crystal growth, germanene, germanium, in situ heating measurement, interfaces
刊行年月日: 2023-06-29
出版者: Wiley
掲載誌:
研究助成金:
原稿種別: 著者最終稿 (Accepted manuscript)
MDR DOI: https://doi.org/10.48505/nims.4256
公開URL: https://doi.org/10.1002/andp.202300122
関連資料:
その他の識別子:
連絡先:
更新時刻: 2024-06-29 08:30:27 +0900
MDRでの公開時刻: 2024-06-29 08:30:27 +0900
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SS08f_manuscript_SSuzuki.pdf
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application/pdf |
サイズ | 3.48MB | 詳細 |