Seiya Suzuki
(Advanced Science Research Center (ASRC), Japan Atomic Energy Agency (JAEA))
;
Yoshihiro Nemoto
(Electron Microscopy Analysis Station, National Institute for Materials Science (NIMS))
;
Natsumi Shiiki
(International Center for Young Scientists (ICYS), National Institute for Materials Science (NIMS))
;
Yoshiko Nakayama
(Electron Microscopy Analysis Station, National Institute for Materials Science (NIMS))
;
Masaki Takeguchi
(Electron Microscopy Analysis Station, National Institute for Materials Science (NIMS))
Description:
(abstract)A graphene/Ge/graphene encapsulated structure was fabricatead. In situ heating TEM revealed that Ge like droplets moved and coalesced with other Ge droplets, indicating that Ge remained as a liquid phase between graphene layers at temperatures higher than the Ge melting point. It was also observed that droplet Ge incorporates the surrounding amorphous Ge as Ge nuclei, thereby increasing its size (domain growth). These results indicated that Ge crystals can be grown at the interface of van der Waals materials, which will be important for future germanene growth at solid interfaces.
Rights:
Keyword: crystal growth, germanene, germanium, in situ heating measurement, interfaces
Date published: 2023-06-29
Publisher: Wiley
Journal:
Funding:
Manuscript type: Author's version (Accepted manuscript)
MDR DOI: https://doi.org/10.48505/nims.4256
First published URL: https://doi.org/10.1002/andp.202300122
Related item:
Other identifier(s):
Contact agent:
Updated at: 2024-06-29 08:30:27 +0900
Published on MDR: 2024-06-29 08:30:27 +0900
Filename | Size | |||
---|---|---|---|---|
Filename |
SS08f_manuscript_SSuzuki.pdf
(Thumbnail)
application/pdf |
Size | 3.48 MB | Detail |