ジャーナル論文 In situ Transmission Electron Microscopy Observation of Melted Germanium Encapsulated in Multilayer Graphene
Seiya Suzuki (author) (この著者で検索)
ORCID https://orcid.org/0000-0003-2445-7462
Japan Atomic Energy Agency (JAEA) Advanced Science Research Center (ASRC)
SAMURAI NIMS Researchers Directory SAMURAI
ORCID SAMURAI ;
Yoshihiro Nemoto (author) (この著者で検索)
National Institute for Materials Science (NIMS) Electron Microscopy Analysis Station
;
Natsumi Shiiki (author) (この著者で検索)
National Institute for Materials Science (NIMS) International Center for Young Scientists (ICYS)
;
Yoshiko Nakayama (author) (この著者で検索)
National Institute for Materials Science (NIMS) Electron Microscopy Analysis Station
;
Masaki Takeguchi (author) (この著者で検索)
ORCID https://orcid.org/0000-0002-0282-6020
National Institute for Materials Science (NIMS) Electron Microscopy Analysis Station
SAMURAI NIMS Researchers Directory SAMURAI
ORCID SAMURAI
コレクション

引用
Seiya Suzuki, Yoshihiro Nemoto, Natsumi Shiiki, Yoshiko Nakayama, Masaki Takeguchi. In situ Transmission Electron Microscopy Observation of Melted Germanium Encapsulated in Multilayer Graphene. ANNALEN DER PHYSIK. 2023, 535 (), 2300122-2300122. https://doi.org/10.1002/andp.202300122
SAMURAI

説明:

(abstract)

A graphene/Ge/graphene encapsulated structure was fabricatead. In situ heating TEM revealed that Ge like droplets moved and coalesced with other Ge droplets, indicating that Ge remained as a liquid phase between graphene layers at temperatures higher than the Ge melting point. It was also observed that droplet Ge incorporates the surrounding amorphous Ge as Ge nuclei, thereby increasing its size (domain growth). These results indicated that Ge crystals can be grown at the interface of van der Waals materials, which will be important for future germanene growth at solid interfaces.

権利情報:

  • In Copyright

    This is the peer reviewed version of the following article: In Situ Transmission Electron Microscopy Observation of Melted Germanium Encapsulated in Multilayer Graphene, which has been published in final form at https://doi.org/10.1002/andp.202300122 . This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions. This article may not be enhanced, enriched or otherwise transformed into a derivative work, without express permission from Wiley or by statutory rights under applicable legislation. Copyright notices must not be removed, obscured or modified. The article must be linked to Wiley’s version of record on Wiley Online Library and any embedding, framing or otherwise making available the article or pages thereof by third parties from platforms, services and websites other than Wiley Online Library must be prohibited.

キーワード: crystal growth, germanene, germanium, in situ heating measurement, interfaces

刊行年月日: 2023-06-29

出版者: Wiley

掲載誌:

  • ANNALEN DER PHYSIK (ISSN: 00033804) vol. 535 p. 2300122-2300122

研究助成金:

  • JSPS 20K15134
  • PRESTO JPMJPR21B7
  • MEXT JPMXP09F19NMN010

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4256

公開URL: https://doi.org/10.1002/andp.202300122

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更新時刻: 2024-06-29 08:30:27 +0900

MDRでの公開時刻: 2024-06-29 08:30:27 +0900

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