2 records found.
Minigap-induced negative differential resistance in multilayer -based tunnel junctions
- Journal article
- Creator
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;Seiya Kawasaki (author) (Search by this author)Kei Kinoshita (author) (Search by this author)
https://orcid.org/0009-0005-4586-734X
(unauthenticated)
;
Rai Moriya (author) (Search by this author)
https://orcid.org/0000-0001-7471-7432
(unauthenticated)
;
Momoko Onodera (author) (Search by this author)
https://orcid.org/0000-0001-9457-6796
(unauthenticated)
;
Yijin Zhang (author) (Search by this author)
https://orcid.org/0000-0003-1127-1124
(unauthenticated)
;
Kenji Watanabe (author) (Search by this author)
;
Takashi Taniguchi (author) (Search by this author)
;
Takao Sasagawa (author) (Search by this author)
https://orcid.org/0000-0003-0149-6696
(unauthenticated)
;
Tomoki Machida (author) (Search by this author)
https://orcid.org/0000-0002-1938-7415
(unauthenticated)
- Keyword
- Negative differential resistance, MoS2, tunnel junction
- Date published
- 2024-07-01
- Updated at
- 2025-02-06 12:30:24 +0900
All 2D Heterostructure Tunnel Field-Effect Transistors: Impact of Band Alignment and Heterointerface Quality
- Journal article
- Creator
-
;Keigo Nakamura (author) (Search by this author)Naoka Nagamura (author) (Search by this author)National Institute for Materials Science
;
;Keiji Ueno (author) (Search by this author)Takashi Taniguchi (author) (Search by this author)National Institute for Materials Science
;
Kenji Watanabe (author) (Search by this author)National Institute for Materials Science
;
Kosuke Nagashio (author) (Search by this author)
- Keyword
- All 2D heterostructure devices, Band to band tunneling, Negative differential resistance, Subthreshold swing, Type III band alignment
- Date published
- 2020-11-18
- Updated at
- 2024-12-10 16:56:20 +0900