2 records found.
Electrical Properties of Boron-Doped Diamond MOSFETs With Ozone as Oxygen Precursor for Al2O3 Deposition
- Journal article
- Creator
-
Jiangwei Liu (author) (Search by this author)National Institute for Materials Science
;
Tokuyuki Teraji (author) (Search by this author)National Institute for Materials Science
;
Bo Da (author) (Search by this author)National Institute for Materials Science
;
Yasuo Koide (author) (Search by this author)National Institute for Materials Science
- Keyword
- Boron-doped diamond, MOS capacitor, MOSFET
- Date published
- 2023-03-16
- Updated at
- 2024-01-05 22:13:56 +0900
High Current Output Hydrogenated Diamond Triple-Gate MOSFETs
- Journal article
- Creator
-
LIU, Jiangwei (author) (Search by this author)機能性材料研究拠点, National Institute for Materials Science
;
;OOSATO, Hirotaka (author) (Search by this author)技術開発・共用部門/微細加工プラットフォーム, National Institute for Materials ScienceDA, Bo (author) (Search by this author)統合型材料開発・情報基盤部門/材料データプラットフォームセンター/材料データ解析グループ, National Institute for Materials Science
;
KOIDE, Yasuo (author) (Search by this author)技術開発・共用部門/ＮＩＭＳ・名大窒化ガリウム評価基盤研究ラボラトリ －天野・小出共同研究ラボ－, National Institute for Materials Science
- Keyword
- Diamond, MOSFET, triple-gate
- Date published
- 2019-05-08
- Updated at
- 2024-01-05 22:13:57 +0900