High Current Output Hydrogenated Diamond Triple-Gate MOSFETs

LIU, Jiangwei; OOSATO, Hirotaka; DA, Bo; KOIDE, Yasuo

doi:10.1109/JEDS.2019.2915250

Article High Current Output Hydrogenated Diamond Triple-Gate MOSFETs

LIU, Jiangwei (機能性材料研究拠点, National Institute for Materials Science) ; OOSATO, Hirotaka (技術開発・共用部門/微細加工プラットフォーム, National Institute for Materials Science) ; DA, Bo (統合型材料開発・情報基盤部門/材料データプラットフォームセンター/材料データ解析グループ, National Institute for Materials Science) ; KOIDE, Yasuo (技術開発・共用部門/ＮＩＭＳ・名大窒化ガリウム評価基盤研究ラボラトリ　－天野・小出共同研究ラボ－, National Institute for Materials Science)

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LIU, Jiangwei, OOSATO, Hirotaka, DA, Bo, KOIDE, Yasuo. High Current Output Hydrogenated Diamond Triple-Gate MOSFETs. IEEE Journal of the Electron Devices Society. 2019, 7 (), 561-565.

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(abstract)

In this paper, planar-type and novel triple-gate fin-type hydrogenated diamond (H-diamond) metal-oxide-semiconductor field-effect transistors (MOSFETs) are fabricated on single-crystalline diamond substrate. Both MOSFETs show good operations with on/off ratios as high as 1010. Current output maximum normalized by gate width for the triple-gate H-diamond MOSFET is ‒271.3 mA mm‒1, which is almost two times higher than that of the planar-type MOSFET. This study is meaningful to fabricate high current out and downscaled H-diamond MOSFETs.

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Keyword: Diamond, MOSFET, triple-gate

Date published: 2019-05-08

Publisher: IEEE

Journal:

IEEE Journal of the Electron Devices Society (ISSN: 21686734) vol. 7 p. 561-565

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Manuscript type: Publisher's version (Version of record)

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First published URL: https://doi.org/10.1109/JEDS.2019.2915250

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Updated at: 2024-01-05 22:13:57 +0900

Published on MDR: 2023-02-28 11:28:04 +0900

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