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説明:

In this paper, planar-type and novel triple-gate fin-type hydrogenated diamond (H-diamond) metal-oxide-semiconductor field-effect transistors (MOSFETs) are fabricated on single-crystalline diamond substrate. Both MOSFETs show good operations with on/off ratios as high as 1010. Current output maximum normalized by gate width for the triple-gate H-diamond MOSFET is ‒271.3 mA mm‒1, which is almost two times higher than that of the planar-type MOSFET. This study is meaningful to fabricate high current out and downscaled H-diamond MOSFETs.

権利情報:

• In Copyright
  

  In Copyright

キーワード: Diamond, MOSFET, triple-gate

刊行年月日: 2019-05-08

出版者: IEEE

掲載誌:

• IEEE Journal of the Electron Devices Society (ISSN: 21686734) vol. 7 p. 561-565

研究助成金:

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1109/JEDS.2019.2915250

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更新時刻: 2024-01-05 22:13:57 +0900

MDRでの公開時刻: 2023-02-28 11:28:04 +0900