3 records found.
Low-noise and compact detection system using RF MEMS switch for solid-state NMR spectroscopy at cryogenic temperature: Proof-of-concept experiment
- Journal article
- Creator
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Sotaro Nishioka (author) (Search by this author)
;
;Naoki Sakuyama (author) (Search by this author)Ken Obara (author) (Search by this author)
https://orcid.org/0000-0002-6981-6521
(unauthenticated)
;
Akiko T. Saito (author) (Search by this author)
;
;Mitsuharu Yashima (author) (Search by this author)Hidekazu Mukuda (author) (Search by this author) - Keyword
- NMR, MEMS switch, Cryogenic amplifier, HEMT, Cryogenics
- Date published
- 2025-10-01
- Updated at
- 2026-01-15 09:32:30 +0900
In situ nanobeam x-ray diffraction of local strain in AlGaN/GaN high-electron-mobility transistors under operating condition
- Journal article
- Creator
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;Akihiro Shimada (author) (Search by this author);Haruna Shiomi (author) (Search by this author)Tetsuya Tohei (author) (Search by this author)
https://orcid.org/0000-0002-4113-2566
(unauthenticated)
;
Yusuke Hayashi (author) (Search by this author)
;
;Masaya Yamaguchi (author) (Search by this author)Junpei Yamamoto (author) (Search by this author)
https://orcid.org/0009-0007-5684-0569
(unauthenticated)
;
Takeaki Hamachi (author) (Search by this author)
https://orcid.org/0000-0002-0631-1729
(unauthenticated)
;
Yasuhiko Imai (author) (Search by this author)
https://orcid.org/0000-0003-4686-2629
(unauthenticated)
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;Kazushi Sumitani (author) (Search by this author)Shigeru Kimura (author) (Search by this author)
https://orcid.org/0000-0003-1064-7572
(unauthenticated)
;
Shota Kaneki (author) (Search by this author)
https://orcid.org/0000-0003-0806-8571
(unauthenticated)
;
Tamotsu Hashizume (author) (Search by this author)
https://orcid.org/0009-0004-8229-9460
(unauthenticated)
;
Akira Sakai (author) (Search by this author)
https://orcid.org/0000-0002-0654-504X
(unauthenticated)
- Keyword
- GaN, HEMT, Strain, In situ
- Date published
- 2025-08-21
- Updated at
- 2025-08-23 08:30:23 +0900
Fabrication of AlGaN/GaN heterostructures on halide vapor phase epitaxy AlN/SiC templates for high electron mobility transistor application
- Journal article
- Creator
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Masatomo Sumiya (author) (Search by this author)National Institute for Materials Science
;
;Osamu Goto (author) (Search by this author);Yuki Takahara (author) (Search by this author)Yasutaka Imanaka (author) (Search by this author)National Institute for Materials Science
;
Liwen Sang (author) (Search by this author)National Institute for Materials Science
;
;Noboru Fukuhara (author) (Search by this author);Taichiro Konno (author) (Search by this author);Fumimasa Horikiri (author) (Search by this author);Takeshi Kimura (author) (Search by this author);Akira Uedono (author) (Search by this author)Hajime Fujikura (author) (Search by this author)
- Keyword
- HEMT, III-V nitride semiconductor, heterointerface
- Date published
- 2023-08-01
- Updated at
- 2024-12-10 16:56:26 +0900