Formation of GaN mesas with reverse-tapered edge structures on a lattice-matched AlInN layer for a positive beveled edge termination

Journal article

Creator

Takayoshi Oshima (author) (Search by this author)

https://orcid.org/0000-0001-8550-9735

Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group, National Institute for Materials Science

NIMS Researchers Directory SAMURAI

Takayoshi Oshima ;

Masataka Imura (author) (Search by this author)

https://orcid.org/0000-0002-4236-9549

Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group, National Institute for Materials Science

NIMS Researchers Directory SAMURAI

Masataka Imura ;

Yuichi Oshima (author) (Search by this author)

https://orcid.org/0000-0001-8293-4891

Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group, National Institute for Materials Science

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Yuichi Oshima

Keyword

GaN, AlInN, etching, positive bevel edge termination

Date published

2024-08-01

Updated at

2024-08-02 12:30:52 +0900