S Bhandari
;
G H Lee
;
K Watanabe
(National Institute for Materials Science)
;
T Taniguchi
(National Institute for Materials Science)
;
P Kim
;
R M Westervelt
説明:
(abstract)We provide images of electron flow from a collimating contact that directly show the width and shape of the electron beam, obtained using a Scanning Gate Microscope (SGM) cooled to 4.2 K. The device is a hBN-encapsulated graphene hall bar with narrow side contacts on either side of the channel that have an electron emitter at the end and absorbing zig-zag contacts at both side. To form an image of electron flow, the SGM tip is raster scanned at a constant height above the sample surface while the transmission to a receiving contact on opposite sides of the channel is measured. The SGM tip creates a capacitive image charge in the graphene sheet that deflects electrons away from their original paths, changing the transmission T.
権利情報:
キーワード: Ballistic electrons, graphene, electron-optic devices
刊行年月日: 2018-03-22
出版者: IOP Publishing
掲載誌:
研究助成金:
原稿種別: 出版者版 (Version of record)
MDR DOI:
公開URL: https://doi.org/10.1088/2053-1583/aab38a
関連資料:
その他の識別子:
連絡先:
更新時刻: 2025-02-23 22:49:11 +0900
MDRでの公開時刻: 2025-02-23 22:49:11 +0900
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ファイル名 |
Bhandari_2018_2D_Mater._5_021003.pdf
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application/pdf |
サイズ | 1.85MB | 詳細 |