論文 Towards epitaxial graphene p-n junctions as electrically programmable quantum resistance standards

Jiuning Hu (University of Maryland) ; Albert F. Rigosi (University of Maryland) ; Mattias Kruskopf (University of Maryland) ; Yanfei Yang (University of Maryland) ; Bi-Yi Wu (University of Maryland) ; Jifa Tian (University of Maryland) ; Alireza R. Panna (University of Maryland) ; Hsin-Yen Lee (University of Maryland) ; Shamith U. Payagala (University of Maryland) ; George R. Jones (University of Maryland) ; Marlin E. Kraft (University of Maryland) ; Dean G. Jarrett (University of Maryland) ; Kenji Watanabe SAMURAI ORCID (Research Center for Functional Materials/Electric and Electronic Materials Field/Electroceramics Group, National Institute for Materials ScienceROR) ; Takashi Taniguchi SAMURAI ORCID (Research Center for Functional Materials/Exploring Function Field/High Pressure Group, National Institute for Materials ScienceROR) ; Randolph E. Elmquist (University of Maryland) ; David B. Newell (University of Maryland)

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引用
Jiuning Hu, Albert F. Rigosi, Mattias Kruskopf, Yanfei Yang, Bi-Yi Wu, Jifa Tian, Alireza R. Panna, Hsin-Yen Lee, Shamith U. Payagala, George R. Jones, Marlin E. Kraft, Dean G. Jarrett, Kenji Watanabe, Takashi Taniguchi, Randolph E. Elmquist, David B. Newell. Towards epitaxial graphene p-n junctions as electrically programmable quantum resistance standards. SCIENTIFIC REPORTS. 2018, 8 (), . https://doi.org/10.1038/s41598-018-33466-z
SAMURAI

説明:

(abstract)

We report the fabrication and measurement of top gated epitaxial graphene p-n junctions where exfoliated hexagonal boron nitride (h-BN) is used as the gate dielectric. The four-terminal longitudinal resistance across a single junction is well quantized at R_(K-90) (25812.807 ohm) with a relative uncertainty of 10^-7. After the exploration of numerous parameter spaces, we summarize that these devices could operate as building blocks in future programmable electrical resistance standards.

権利情報:

キーワード: Epitaxial graphene, p-n junctions, resistance standards

刊行年月日: 2018-10-09

出版者: Springer Science and Business Media LLC

掲載誌:

  • SCIENTIFIC REPORTS (ISSN: 20452322) vol. 8

研究助成金:

  • DOC | National Institute of Standards and Technology 70NANB12H185
  • DOC | National Institute of Standards and Technology 70NANB12H184

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1038/s41598-018-33466-z

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更新時刻: 2025-02-23 22:50:52 +0900

MDRでの公開時刻: 2025-02-23 22:50:52 +0900

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