Journal article Towards epitaxial graphene p-n junctions as electrically programmable quantum resistance standards
Jiuning Hu (author) (Search by this author)
University of Maryland
;
Albert F. Rigosi (author) (Search by this author)
University of Maryland
;
Mattias Kruskopf (author) (Search by this author)
University of Maryland
;
Yanfei Yang (author) (Search by this author)
University of Maryland
;
Bi-Yi Wu (author) (Search by this author)
University of Maryland
;
Jifa Tian (author) (Search by this author)
University of Maryland
;
Alireza R. Panna (author) (Search by this author)
University of Maryland
;
Hsin-Yen Lee (author) (Search by this author)
University of Maryland
;
Shamith U. Payagala (author) (Search by this author)
University of Maryland
;
George R. Jones (author) (Search by this author)
University of Maryland
;
Marlin E. Kraft (author) (Search by this author)
University of Maryland
;
Dean G. Jarrett (author) (Search by this author)
University of Maryland
;
Kenji Watanabe (author) (Search by this author)
ORCID https://orcid.org/0000-0003-3701-8119
Research Center for Functional Materials/Electric and Electronic Materials Field/Electroceramics Group, National Institute for Materials Science
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ORCID SAMURAI ;
Takashi Taniguchi (author) (Search by this author)
ORCID https://orcid.org/0000-0002-1467-3105
Research Center for Functional Materials/Exploring Function Field/High Pressure Group, National Institute for Materials Science
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ORCID SAMURAI ;
Randolph E. Elmquist (author) (Search by this author)
University of Maryland
;
David B. Newell (author) (Search by this author)
University of Maryland
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Citation
Jiuning Hu, Albert F. Rigosi, Mattias Kruskopf, Yanfei Yang, Bi-Yi Wu, Jifa Tian, Alireza R. Panna, Hsin-Yen Lee, Shamith U. Payagala, George R. Jones, Marlin E. Kraft, Dean G. Jarrett, Kenji Watanabe, Takashi Taniguchi, Randolph E. Elmquist, David B. Newell. Towards epitaxial graphene p-n junctions as electrically programmable quantum resistance standards. SCIENTIFIC REPORTS. 2018, 8 (), . https://doi.org/10.1038/s41598-018-33466-z
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(abstract)

We report the fabrication and measurement of top gated epitaxial graphene p-n junctions where exfoliated hexagonal boron nitride (h-BN) is used as the gate dielectric. The four-terminal longitudinal resistance across a single junction is well quantized at R_(K-90) (25812.807 ohm) with a relative uncertainty of 10^-7. After the exploration of numerous parameter spaces, we summarize that these devices could operate as building blocks in future programmable electrical resistance standards.

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Keyword: Epitaxial graphene, p-n junctions, resistance standards

Date published: 2018-10-09

Publisher: Springer Science and Business Media LLC

Journal:

  • SCIENTIFIC REPORTS (ISSN: 20452322) vol. 8

Funding:

  • DOC | National Institute of Standards and Technology 70NANB12H185
  • DOC | National Institute of Standards and Technology 70NANB12H184

Manuscript type: Publisher's version (Version of record)

MDR DOI:

First published URL: https://doi.org/10.1038/s41598-018-33466-z

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Updated at: 2025-02-23 22:50:52 +0900

Published on MDR: 2025-02-23 22:50:52 +0900

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