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We report the fabrication and measurement of top gated epitaxial graphene p-n junctions where exfoliated hexagonal boron nitride (h-BN) is used as the gate dielectric. The four-terminal longitudinal resistance across a single junction is well quantized at R_(K-90) (25812.807 ohm) with a relative uncertainty of 10^-7. After the exploration of numerous parameter spaces, we summarize that these devices could operate as building blocks in future programmable electrical resistance standards.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: Epitaxial graphene, p-n junctions, resistance standards

刊行年月日: 2018-10-09

出版者: Springer Science and Business Media LLC

掲載誌:

• SCIENTIFIC REPORTS (ISSN: 20452322) vol. 8

研究助成金:

• DOC | National Institute of Standards and Technology 70NANB12H185
• DOC | National Institute of Standards and Technology 70NANB12H184

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1038/s41598-018-33466-z

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更新時刻: 2025-02-23 22:50:52 +0900

MDRでの公開時刻: 2025-02-23 22:50:52 +0900