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Electrical characteristics of boron-doped diamond (B-diamond) metal-oxide-semiconductor field-effect transistors (MOSFETs) fabricated on an epitaxial layer with a thickness (tboron) of 1514 nm and a boron doping concentration (Nboron) level of 1017 cm-3 are investigated. For the as-fabricated B-diamond MOSFET operating at room temperature (298 K), the maximum absolute drain current (|ID,max|) is 4.7 mA/mm. At elevated temperatures of 573 K and 673 K, the |ID,max| values increase to 76.9 mA/mm and 109.2 mA/mm, respectively. The threshold voltage (VTH) values for B-diamond MOSFETs operating at 298 K, 573 K, and 673 K are 320.2 ±5.0 V, 1143.2 ±20.0 V, and 895.1 ±20.0 V, respectively. Post-annealing at 773 K for 30 minutes, the |ID,max| and VTH measured at 298 K improve to 6.0 mA/mm and 258.7 ±5.0 V, respectively. Capacitance–voltage measurements indicate that the annealing process improves the dielectric property of the Al2O3 insulator and reduces the fixed and trapped charge densities in the Al2O3/B-diamond MOS capacitor. Impact of the doping profile on the electrical performance of B-diamond FETs is summarized. At a constant Nboron level, both |ID,max| and VTH increase with increasing tboron. On the other hand, at a similar tboron, these parameters increase with higher Nboron.

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  This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in J. Liu, T. Teraji; Impact of doping profile on electrical performance of boron-doped diamond metal–oxide–semiconductor field-effect transistors. J. Appl. Phys. 14 July 2026; 140 (2): 024504 and may be found at https://doi.org/10.1063/5.0318837.

Keyword: diamond

Date published: 2026-07-14

Publisher: AIP Publishing

Journal:

• Journal of Applied Physics (ISSN: 00218979) vol. 140 issue. 2 024504

Funding:

• Japan Society for the Promotion of Science 23K03966 and 20H05661
• Core Research for Evolutional Science and Technology JPMJCR1773
• Japan Science and Technology Agency JPMJMS2062
• Ministry of Education, Culture, Sports, Science and Technology JPMI00316
• Ministry of Education, Culture, Sports, Science and Technology JPMXS0118068379
• Ministry of Education, Culture, Sports, Science and Technology JPMXP1225WS0451 and JPMXP1225NM5076

Manuscript type: Author's version (Submitted manuscript)

MDR DOI: https://doi.org/10.48505/nims.6406

First published URL: https://doi.org/10.1063/5.0318837

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Updated at: 2026-07-14 10:52:28 +0900

Published on MDR: 2026-07-14 12:30:13 +0900