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説明:

The spin Hall effect (SHE) can generate a pure spin current by an electric current, which is promisingly used to electrically control magnetization. To reduce the power consumption of this control, a giant spin Hall angle (SHA) in the SHE is desired in low-resistivity systems for practical applications. Here, critical spin fluctuation near the antiferromagnetic (AFM) phase transition in chromium (Cr) is proven to be an effective mechanism for creating an additional part of the SHE, named the fluctuation spin Hall effect. The SHA is significantly enhanced when the temperature approaches the Néel temperature (TN) of Cr and has a peak value of −0.36 near TN. This value is higher than the room-temperature value by 153% and leads to a low normalized power consumption among known spin–orbit torque materials. This study demonstrates the critical spin fluctuation as a prospective way to increase the SHA and enriches the AFM material candidates for spin–orbitronic devices.

権利情報:

• In Copyright
  This document is the Accepted Manuscript version of a Published Work that appeared in final form in NANO LETTERS, copyright © 2023 American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acs.nanolett.3c03085

キーワード: spin Hall effect, spin fluctuation, antiferromagnetic chromium

刊行年月日: 2023-12-27

出版者: American Chemical Society (ACS)

掲載誌:

• NANO LETTERS (ISSN: 15306984) vol. 23 p. 11485-11492

研究助成金:

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4323

公開URL: https://doi.org/10.1021/acs.nanolett.3c03085

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更新時刻: 2024-12-08 12:30:12 +0900

MDRでの公開時刻: 2024-12-08 12:30:13 +0900