Ultrahigh Gain Diamond Deep-ultraviolet Photodetector Due to Surface Hydrogen Termination and Deep defects

Keyun Gu; Zilong Zhang; Jian Huang; Yasuo Koide; Meiyong Liao

Poster Ultrahigh Gain Diamond Deep-ultraviolet Photodetector Due to Surface Hydrogen Termination and Deep defects

Keyun Gu (Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group, National Institute for Materials Science) ; Zilong Zhang (Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group, National Institute for Materials Science) ; Jian Huang (Shanghai University) ; Yasuo Koide (Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group, National Institute for Materials Science) ; Meiyong Liao (Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group, National Institute for Materials Science)

Download file (210 KB)
Download as zip (202 KB)

Collection

Citation

Keyun Gu, Zilong Zhang, Jian Huang, Yasuo Koide, Meiyong Liao. Ultrahigh Gain Diamond Deep-ultraviolet Photodetector Due to Surface Hydrogen Termination and Deep defects . https://doi.org/10.48505/nims.5492

(BibTeX)

Description:

(abstract)

Herein, we demonstrate that the ultra-high quantum efficiency/gain DUV photodetectors (PDs) with low operation voltages (<5 V) can be achieved by using the synergistic effect of surface states and deep defects in a type-Ib single-crystal diamond (SCD) substrate, as shown in Figure 1. The overall photoresponse, such as the responsivity, dark current, spectral selectivity, and response speed, of the diamond DUV-PDs can be simply tailored by the surface hydrogen or oxygen termination of the diamond containing deep nitrogen defect. The DUV responsivity and external quantum efficiency (EQE) are more than 2.5x104A/W and 1.4x107%, respectively, at 220 nm-wavelength light, the highest among the DUV detectors and comparable with those of PMTs. The DUV/visible light rejection ratio (R220 nm/R400 nm) is as high as 6.7×105. The depletion of the two-dimensional hole gas on the hydrogen-terminated diamond surface by deep nitrogen defect provides a low background dark current and the filling of the ionized nitrogen upon DUV illumination induces a huge photocurrent. The synergistic effect of the surface states and the bulk deep defects opens the avenue for the development of DUV detectors with ultra-high sensitivity and low operation voltages compatible with integrated circuits.

Rights: