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Herein, we demonstrate that the ultra-high quantum efficiency/gain DUV photodetectors (PDs) with low operation voltages (<5 V) can be achieved by using the synergistic effect of surface states and deep defects in a type-Ib single-crystal diamond (SCD) substrate, as shown in Figure 1. The overall photoresponse, such as the responsivity, dark current, spectral selectivity, and response speed, of the diamond DUV-PDs can be simply tailored by the surface hydrogen or oxygen termination of the diamond containing deep nitrogen defect. The DUV responsivity and external quantum efficiency (EQE) are more than 2.5x104A/W and 1.4x107%, respectively, at 220 nm-wavelength light, the highest among the DUV detectors and comparable with those of PMTs. The DUV/visible light rejection ratio (R220 nm/R400 nm) is as high as 6.7×105. The depletion of the two-dimensional hole gas on the hydrogen-terminated diamond surface by deep nitrogen defect provides a low background dark current and the filling of the ionized nitrogen upon DUV illumination induces a huge photocurrent. The synergistic effect of the surface states and the bulk deep defects opens the avenue for the development of DUV detectors with ultra-high sensitivity and low operation voltages compatible with integrated circuits.

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キーワード: Diamond, photodetector

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会議: The 18th International Conference on New Diamond and Nano Carbons (2025-05-11 - 2025-05-15)

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原稿種別: 論文以外のデータ

MDR DOI: https://doi.org/10.48505/nims.5492

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更新時刻: 2025-05-22 08:30:29 +0900

MDRでの公開時刻: 2025-05-22 08:23:10 +0900