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説明:

We measure the thermal conductance at the 2D MoS2/h-BN interface by Joule heating a monolayer MoS2 to generate a vertical temperature gradient across the heterostructure. Raman spectroscopy is used to measure the temperatures of MoS2 and h-BN independently. We obtain an interface thermal conductance of 17 MW/m2K at 300 K. Our calculations, from which the transmission spectrum can be obtained, show that the discrepancy of thermal conductance for the interface is due to the weaker cross-plane transmission of phonon modes from MoS2 to h-BN. Our study demonstrates that the MoS2/h-BN interface limits cross-plane heat dissipation, and thereby it could impact the design and applications of MoS2/h-BN based devices where thermal management is critical.

権利情報:

• Creative Commons BY Attribution 4.0 International
  

キーワード: 2D materials, thermal management, interface conductance

刊行年月日: 2017-03-06

出版者: Springer Science and Business Media LLC

掲載誌:

• Scientific Reports (ISSN: 20452322) vol. 7 issue. 1 43886

研究助成金:

原稿種別: 出版者版 (Version of record)

MDR DOI:

公開URL: https://doi.org/10.1038/srep43886

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更新時刻: 2025-03-01 08:30:24 +0900

MDRでの公開時刻: 2025-03-01 08:30:24 +0900