Yi Liu
;
Zhun-Yong Ong
;
Jing Wu
;
Yunshan Zhao
;
Kenji Watanabe
(National Institute for Materials Science
)
;
Takashi Taniguchi
(National Institute for Materials Science)
;
Dongzhi Chi
;
Gang Zhang
;
John T. L. Thong
;
Cheng-Wei Qiu
;
Kedar Hippalgaonkar
Collection
Citation
Description:
(abstract)We measure the thermal conductance at the 2D MoS2/h-BN interface by Joule heating a monolayer MoS2 to generate a vertical temperature gradient across the heterostructure. Raman spectroscopy is used to measure the temperatures of MoS2 and h-BN independently. We obtain an interface thermal conductance of 17 MW/m2K at 300 K. Our calculations, from which the transmission spectrum can be obtained, show that the discrepancy of thermal conductance for the interface is due to the weaker cross-plane transmission of phonon modes from MoS2 to h-BN. Our study demonstrates that the MoS2/h-BN interface limits cross-plane heat dissipation, and thereby it could impact the design and applications of MoS2/h-BN based devices where thermal management is critical.
Rights:
Keyword: 2D materials, thermal management, interface conductance
Date published: 2017-03-06
Publisher: Springer Science and Business Media LLC
Journal:
- Scientific Reports (ISSN: 20452322) vol. 7 issue. 1 43886
Funding:
Manuscript type: Publisher's version (Version of record)
MDR DOI:
First published URL: https://doi.org/10.1038/srep43886
Related item:
Other identifier(s):
Contact agent:
Updated at: 2025-03-01 08:30:24 +0900
Published on MDR: 2025-03-01 08:30:24 +0900
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