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We investigated the anisotropic selective-area HCl-gas etching behavior for SiO2-masked (001) β-Ga2O3 and its dependence on the temperature T (548-949°C) and HCl partial pressure P0(HCl) (25-250 Pa). The cross-sectional width-to-depth aspect ratio of the etched trenches formed under the striped windows along [010] decreased with increasing the T or decreasing P0(HCl). Secondary ion mass spectrometry revealed a slight diffusion of Si into β-Ga2O3 at T = 949°C while no diffusion was detected at T = 750℃. These results should be a practical guideline for the fabrication of desired three-dimensional structures such as fins/trenches for high-performance β-Ga2O3-based power devices.

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  © 2023 The Japan Society of Applied Physics
  
  This is an author-created, un-copyedited version of an article accepted for publication/published
  in Japanese Journal of Applied Physics. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.35848/1347-4065/acee3b.

Keyword: β-Ga2O3, etching

Date published: 2023-08-01

Publisher: IOP Publishing

Journal:

• JAPANESE JOURNAL OF APPLIED PHYSICS (ISSN: 00214922) vol. 62 issue. 8 p. 80901-80901

Funding:

Manuscript type: Author's version (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4353

First published URL: https://doi.org/10.35848/1347-4065/acee3b

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Updated at: 2024-08-21 08:30:30 +0900

Published on MDR: 2024-08-21 08:30:30 +0900