Investigation of electric double layer effects at Li3PO4 Li+ solid electrolyte thin film interfaces using a field-effect transistor with Al-doped SiC (0001) single crystal

Kaoru Shibata; Wataru Namiki; Daiki Nishioka; Kazuya Terabe; Takashi Tsuchiya

doi:10.35848/1347-4065/adabef

Article Investigation of electric double layer effects at Li₃PO₄ Li⁺ solid electrolyte thin film interfaces using a field-effect transistor with Al-doped SiC (0001) single crystal

Kaoru Shibata (National Institute for Materials Science) ; Wataru Namiki (National Institute for Materials Science) ; Daiki Nishioka (National Institute for Materials Science) ; Kazuya Terabe ; Takashi Tsuchiya (National Institute for Materials Science)

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Kaoru Shibata, Wataru Namiki, Daiki Nishioka, Kazuya Terabe, Takashi Tsuchiya. Investigation of electric double layer effects at Li₃PO₄ Li⁺ solid electrolyte thin film interfaces using a field-effect transistor with Al-doped SiC (0001) single crystal. Japanese Journal of Applied Physics. 2025, 64 (2), . https://doi.org/10.35848/1347-4065/adabef

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We developed a Li+ electrolyte-gated electric double-layer transistor (EDLT) using Al-doped SiC (0001) single crystal as the channel material. Thanks to the high tolerance of SiC single crystal to plasma irradiation, the Al-doped SiC EDLT was successfully fabricated with RF-sputtered Li3PO4 Li+ solid electrolyte thin film, which was previously difficult due to plasma-induced damage to the semiconductor channel. The EDLT operation of the device was confirmed by observing a 75% resistance change in the transfer characteristics. Hall measurements were employed to
evaluate carrier density changes and directly investigate the behavior of the EDL at the interface. The calculated capacitance revealed contributions from both the EDL capacitance and depletion layer capacitance, indicating that the depletion layer formed on the SiC channel surface prevented accurate evaluation of EDL capacitance. For accurate EDL capacitance measurement, generating an accumulation layer on the surface of the semiconductor channel is found to be essential.

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This is an author-created, un-copyedited version of an article accepted for publication/published in Japanese Journal of Applied Physics. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or
any version derived from it. The Version of Record is available online at https://doi.org/10.35848/1347-4065/adabef.