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説明:

We developed a Li+ electrolyte-gated electric double-layer transistor (EDLT) using Al-doped SiC (0001) single crystal as the channel material. Thanks to the high tolerance of SiC single crystal to plasma irradiation, the Al-doped SiC EDLT was successfully fabricated with RF-sputtered Li3PO4 Li+ solid electrolyte thin film, which was previously difficult due to plasma-induced damage to the semiconductor channel. The EDLT operation of the device was confirmed by observing a 75% resistance change in the transfer characteristics. Hall measurements were employed to
evaluate carrier density changes and directly investigate the behavior of the EDL at the interface. The calculated capacitance revealed contributions from both the EDL capacitance and depletion layer capacitance, indicating that the depletion layer formed on the SiC channel surface prevented accurate evaluation of EDL capacitance. For accurate EDL capacitance measurement, generating an accumulation layer on the surface of the semiconductor channel is found to be essential.

権利情報:

• Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
  

  This is an author-created, un-copyedited version of an article accepted for publication/published in Japanese Journal of Applied Physics. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or
  any version derived from it. The Version of Record is available online at https://doi.org/10.35848/1347-4065/adabef.

キーワード: electric double layer transistor, Li3PO4, SiC

刊行年月日: 2025-02-01

出版者: IOP Publishing

掲載誌:

• Japanese Journal of Applied Physics (ISSN: 00214922) vol. 64 issue. 2

研究助成金:

• JST JPMJGX23S2 (GteX)

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.5314

公開URL: https://doi.org/10.35848/1347-4065/adabef

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更新時刻: 2026-02-03 12:30:20 +0900

MDRでの公開時刻: 2026-02-03 09:46:30 +0900