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The origin of intrinsic operational instability in OFETs is discussed by comparing bias stress effects of OFETs with unidirectionally aligned and unaligned active layers of two different semiconducting polymers under vacuum environment. By forming hydrophobic nano-groove structures on gate dielectric surfaces, a high-mobility donor-acceptor copolymer, PCDTPT and a benchmark semicrystalline polymer, PBTTT-C16 were successfully aligned. The experimental results indicate that an increase in mobility does not necessarily lead to an increase in operational stability. The interface trap density of states analysis revealed that the lower operational stability of PCDTPT-OFETs was not due to the tail state change but primarily due to the much larger turn-on voltage shift. The major mechanism causing turn-on voltage shift should be the charge carrier transfer from the channel to the gate dielectric.

権利情報:

• In Copyright
  

  This is the peer reviewed version of the following article: Origin of Intrinsic Operational Instability in Organic Field-Effect Transistors with Aligned High-Mobility Donor–Acceptor Copolymer Active Layers, which has been published in final form at https://doi.org/10.1002/admt.202301503. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions. This article may not be enhanced, enriched or otherwise transformed into a derivative work, without express permission from Wiley or by statutory rights under applicable legislation. Copyright notices must not be removed, obscured or modified. The article must be linked to Wiley’s version of record on Wiley Online Library and any embedding, framing or otherwise making available the article or pages thereof by third parties from platforms, services and websites other than Wiley Online Library must be prohibited.

キーワード: polymer-based organic field-effect transistors, nano-grooves, bias-stress effects, charge carrier mobility, alignment control

刊行年月日: 2023-10-20

出版者: Wiley

掲載誌:

• Advanced Materials Technologies (ISSN: 2365709X) vol. 9 issue. 2 p. 2301503-2301503

研究助成金:

• JSPS 20K05310 (基盤研究(C)（一般）: 高分子有機トランジスタの高移動度・高安定動作実現における液晶性の重要性)
• the Ministry of Education, Culture, Sports, Science and Technology (MEXT) JPMXP1223NM5185 (ナノレベルで構造制御された有機薄膜の作製とそれを用いたデバイスの作製・評価)

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4358

公開URL: https://doi.org/10.1002/admt.202301503

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更新時刻: 2024-10-20 12:30:19 +0900

MDRでの公開時刻: 2024-10-20 12:30:20 +0900