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説明:

The persistence of voltage-switchable collective electronic phenomena down to the atomic scale has extensive implications for area-efficient and energy-efficient electronics, especially in emerging nonvolatile memory technology. We investigate the performance of a ferroelectric field-effect transistor (FeFET) based on sliding ferroelectricity in bilayer boron nitride at room temperature. Sliding ferroelectricity represents a different form of atomically thin two-dimensional ferroelectrics, characterized by the switching of out-of-plane polarization through interlayer sliding motion. We examined the FeFET device employing monolayer graphene as the channel layer, which demonstrated ultrafast switching speeds on the nanosecond scale and high endurance exceeding 10¹¹ switching cycles, comparable to state-of-the-art FeFET devices. These characteristics highlight the potential of two-dimensional sliding ferroelectrics for inspiring next-generation nonvolatile memory technology.

権利情報:

• In Copyright
  This is the author’s version of the work. It is posted here by permission of the AAAS for personal use, not for redistribution. The definitive version was published in Science on Volume 385, 6 Jun 2024 , DOI: 10.1126/science.adp35.

キーワード: Sliding ferroelectricity, Ferroelectric field-effect transistor (FeFET), Nonvolatile memory technology

刊行年月日: 2024-07-05

出版者: American Association for the Advancement of Science (AAAS)

掲載誌:

• Science (ISSN: 10959203) vol. 385 issue. 6704 p. 53-56

研究助成金:

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI:

公開URL: https://doi.org/10.1126/science.adp3575

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更新時刻: 2025-07-23 16:30:28 +0900

MDRでの公開時刻: 2025-07-23 16:20:22 +0900