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The persistence of voltage-switchable collective electronic phenomena down to the atomic scale has extensive implications for area-efficient and energy-efficient electronics, especially in emerging nonvolatile memory technology. We investigate the performance of a ferroelectric field-effect transistor (FeFET) based on sliding ferroelectricity in bilayer boron nitride at room temperature. Sliding ferroelectricity represents a different form of atomically thin two-dimensional ferroelectrics, characterized by the switching of out-of-plane polarization through interlayer sliding motion. We examined the FeFET device employing monolayer graphene as the channel layer, which demonstrated ultrafast switching speeds on the nanosecond scale and high endurance exceeding 10¹¹ switching cycles, comparable to state-of-the-art FeFET devices. These characteristics highlight the potential of two-dimensional sliding ferroelectrics for inspiring next-generation nonvolatile memory technology.

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  This is the author’s version of the work. It is posted here by permission of the AAAS for personal use, not for redistribution. The definitive version was published in Science on Volume 385, 6 Jun 2024
  , DOI: 10.1126/science.adp35.

Keyword: Sliding ferroelectricity, Ferroelectric field-effect transistor (FeFET), Nonvolatile memory technology

Date published: 2024-07-05

Publisher: American Association for the Advancement of Science (AAAS)

Journal:

• Science (ISSN: 10959203) vol. 385 issue. 6704 p. 53-56

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Manuscript type: Author's version (Accepted manuscript)

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First published URL: https://doi.org/10.1126/science.adp3575

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Updated at: 2025-07-23 16:30:28 +0900

Published on MDR: 2025-07-23 16:20:22 +0900