M. Kotrla (Research Center for Electronic and Optical Materials/Functional Materials Field/Electro-ceramics Group, National Institute for Materials Science) ; H. Segawa (Research Center for Electronic and Optical Materials, National Institute for Materials Science) ; T. Ohsawa (Research Center for Electronic and Optical Materials/Functional Materials Field/Electro-ceramics Group, National Institute for Materials Science) ; Y. Matsushita (Research Network and Facility Services Division/Materials Fabrication and Analysis Platform/Surface and Bulk Analysis Unit, National Institute for Materials Science) ; P. Janíček (University of Pardubice) ; J. Gutwirth (University of Pardubice) ; V. Nazabal (University of Rennes) ; Č. Drašar (University of Pardubice) ; P. Němec (University of Pardubice)

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引用

M. Kotrla, H. Segawa, T. Ohsawa, Y. Matsushita, P. Janíček, J. Gutwirth, V. Nazabal, Č. Drašar, P. Němec. Phase-change Sn-Se thin films prepared via pulsed laser deposition. CERAMICS INTERNATIONAL. 2024, 51 (), 3109-3114. https://doi.org/10.1016/j.ceramint.2024.11.286

(BibTeX)

説明:

(abstract)

Sn-Se薄膜の相変化について調査した。

権利情報:

• In Copyright
  

キーワード: Phase-change, Sn-Se, Pulsed laser deposition, Thin films, Localization of electrical charge

刊行年月日: 2024-11-20

出版者: Elsevier Ltd

掲載誌:

• CERAMICS INTERNATIONAL (ISSN: 02728842) vol. 51 p. 3109-3114

研究助成金:

• Czech Science Foundation 22-07635S
• Ministry of Education, Youth, and Sports of the Czech Republic LM2023037

原稿種別: 査読前原稿 (Author's original)

MDR DOI: https://doi.org/10.48505/nims.5985

公開URL: https://doi.org/10.1016/j.ceramint.2024.11.286

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更新時刻: 2025-12-10 16:30:14 +0900

MDRでの公開時刻: 2025-12-10 16:25:19 +0900

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ファイル名	manuscript Ceram Int R2.docx (サムネイル) application/vnd.openxmlformats-officedocument.wordprocessingml.document	サイズ	1.63MB	詳細