Article Disclosing the annihilation effect of ion-implantation induced defects in single-crystal diamond by resonant MEMS

Guo Chen ; Zilong Zhang ; Yasuo Koide ; Satoshi Koizumi ; Zhaohui Huang ; Meiyong Liao SAMURAI ORCID (National Institute for Materials ScienceROR)

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Guo Chen, Zilong Zhang, Yasuo Koide, Satoshi Koizumi, Zhaohui Huang, Meiyong Liao. Disclosing the annihilation effect of ion-implantation induced defects in single-crystal diamond by resonant MEMS. DIAMOND AND RELATED MATERIALS. 2023, 38 (), 110240-110240. https://doi.org/10.1016/j.diamond.2023.110240
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(abstract)

Here, we systematically investigate the effect of ultra-high vacuum annealing on the resonance properties of SCD cantilevers. It is observed that the Q factors are markedly improved by nearly twice after annealing at 1100 °C due to the annihilation of the ion implantation induced damage in the resonators. Therefore, reducing the defects in the resonators by high-temperature annealing the as-fabricated SCD MEMS cantilevers is one of the strategies to improve the Q factors. This work also proves out that MEMS represents a more sensitive tool for characterizing the crystalline quality of diamond, compared with the conventional structural methods.

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Keyword: Diamond, MEMS

Date published: 2023-07-26

Publisher: Elsevier BV

Journal:

  • DIAMOND AND RELATED MATERIALS (ISSN: 18790062) vol. 38 p. 110240-110240

Funding:

Manuscript type: Author's version (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4296

First published URL: https://doi.org/10.1016/j.diamond.2023.110240

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Updated at: 2025-07-26 08:30:34 +0900

Published on MDR: 2025-07-26 08:16:47 +0900

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