Disclosing the annihilation effect of ion-implantation induced defects in single-crystal diamond by resonant MEMS

Guo Chen; Zilong Zhang; Yasuo Koide; Satoshi Koizumi; Zhaohui Huang; Meiyong Liao

doi:10.1016/j.diamond.2023.110240

論文 Disclosing the annihilation effect of ion-implantation induced defects in single-crystal diamond by resonant MEMS

Guo Chen ; Zilong Zhang ; Yasuo Koide ; Satoshi Koizumi ; Zhaohui Huang ; Meiyong Liao (National Institute for Materials Science)

Download file (1.93MB)
Download as zip (1.78MB)

コレクション

引用

Guo Chen, Zilong Zhang, Yasuo Koide, Satoshi Koizumi, Zhaohui Huang, Meiyong Liao. Disclosing the annihilation effect of ion-implantation induced defects in single-crystal diamond by resonant MEMS. DIAMOND AND RELATED MATERIALS. 2023, 38 (), 110240-110240. https://doi.org/10.1016/j.diamond.2023.110240

(BibTeX)

説明:

(abstract)

Here, we systematically investigate the effect of ultra-high vacuum annealing on the resonance properties of SCD cantilevers. It is observed that the Q factors are markedly improved by nearly twice after annealing at 1100 °C due to the annihilation of the ion implantation induced damage in the resonators. Therefore, reducing the defects in the resonators by high-temperature annealing the as-fabricated SCD MEMS cantilevers is one of the strategies to improve the Q factors. This work also proves out that MEMS represents a more sensitive tool for characterizing the crystalline quality of diamond, compared with the conventional structural methods.

権利情報: