Journal article Modulation of electrical potential and conductivity in an atomic-layer semiconductor heterojunction
Yu Kobayashi (author) (Search by this author)
;
Shoji Yoshida (author) (Search by this author)
;
Ryuji Sakurada (author) (Search by this author)
;
Kengo Takashima (author) (Search by this author)
;
Takahiro Yamamoto (author) (Search by this author)
;
Tetsuki Saito (author) (Search by this author)
;
Satoru Konabe (author) (Search by this author)
;
Takashi Taniguchi (author) (Search by this author)
ORCID SAMURAI ;
Kenji Watanabe (author) (Search by this author)
ORCID SAMURAI ;
Yutaka Maniwa (author) (Search by this author)
;
Osamu Takeuchi (author) (Search by this author)
;
Hidemi Shigekawa (author) (Search by this author)
;
Yasumitsu Miyata (author) (Search by this author)
Collection

Citation
Yu Kobayashi, Shoji Yoshida, Ryuji Sakurada, Kengo Takashima, Takahiro Yamamoto, Tetsuki Saito, Satoru Konabe, Takashi Taniguchi, Kenji Watanabe, Yutaka Maniwa, Osamu Takeuchi, Hidemi Shigekawa, Yasumitsu Miyata. Modulation of electrical potential and conductivity in an atomic-layer semiconductor heterojunction. Scientific Reports. 2016, 6 (1), 31223. https://doi.org/10.1038/srep31223
SAMURAI

Description:

(abstract)

We report conductivity enhancement and electrical potential modulation of heterojunction interfaces based on TMDC bilayers consisted of MoS2 and WS2. Scanning tunneling analyses showed the formation of 1D confining potential in the valence (conduction) band, as well as bandgap narrowing around the heterointerface. The modulation of electronic properties were also probed as the increase of current in conducting atomic force microscopy. The observed band bending can be explained by the presence of 1D fixed charges due to piezoelectric interface polarization. The present findings indicate that the atomic layer heterojunctions provide a novel approach to realizing tunable 1D electrical potential for embedded quantum wires and ultrashort barriers of electrical transport.

Rights:

Keyword: Semiconductor heterojunction, transition metal dichalcogenides, electrical properties

Date published: 2016-08-12

Publisher: Springer Science and Business Media LLC

Journal:

  • Scientific Reports (ISSN: 20452322) vol. 6 issue. 1 31223

Funding:

Manuscript type: Publisher's version (Version of record)

MDR DOI:

First published URL: https://doi.org/10.1038/srep31223

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Updated at: 2025-03-01 08:30:20 +0900

Published on MDR: 2025-03-01 08:30:20 +0900

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