2 records found.
The Atomic and Electronic Structure of 0° and 60° Grain Boundaries in MoS2
- Journal article
- Creator
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;Terunobu Nakanishi (author) (Search by this author);Shoji Yoshida (author) (Search by this author);Kota Murase (author) (Search by this author);Osamu Takeuchi (author) (Search by this author)Takashi Taniguchi (author) (Search by this author)
;
Kenji Watanabe (author) (Search by this author)
;
;Hidemi Shigekawa (author) (Search by this author);Yu Kobayashi (author) (Search by this author);Yasumitsu Miyata (author) (Search by this author);Hisanori Shinohara (author) (Search by this author)Ryo Kitaura (author) (Search by this author)National Institute for Materials Science
- Keyword
- Grain boundaries, monolayer MoS2, scanning tunneling microscopy
- Date published
- 2019-04-17
- Updated at
- 2025-02-23 22:49:14 +0900
Modulation of electrical potential and conductivity in an atomic-layer semiconductor heterojunction
- Journal article
- Creator
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;Yu Kobayashi (author) (Search by this author);Shoji Yoshida (author) (Search by this author);Ryuji Sakurada (author) (Search by this author);Kengo Takashima (author) (Search by this author);Takahiro Yamamoto (author) (Search by this author);Tetsuki Saito (author) (Search by this author);Satoru Konabe (author) (Search by this author)Takashi Taniguchi (author) (Search by this author)National Institute for Materials Science
;
Kenji Watanabe (author) (Search by this author)National Institute for Materials Science
;
;Yutaka Maniwa (author) (Search by this author);Osamu Takeuchi (author) (Search by this author);Hidemi Shigekawa (author) (Search by this author)Yasumitsu Miyata (author) (Search by this author)
- Keyword
- Semiconductor heterojunction, transition metal dichalcogenides, electrical properties
- Date published
- 2016-08-12
- Updated at
- 2025-03-01 08:30:20 +0900