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In this study, we have investigated the growth behavior of SnSₓ thin films by molecular beam deposition using a plasma-cracked sulfur source to explore the influence of sulfur chemical activity on phase formation and stability. Plasma activation of elemental sulfur enabled the successful formation of stoichiometric and crystalline SnS at moderate substrate temperatures, while uncracked S₈ resulted in sulfur-deficient films. Furthermore, under higher sulfur flux and lower thermal budget, crystalline SnS₂ formation was observed. The phase selectivity was systematically evaluated through Raman spectroscopy, X-ray diffraction, and AES, and the desorption behavior of SnS correlated well with reported vapor pressure data. These findings demonstrate that plasma cracking enhances sulfur reactivity and enables access to distinct tin sulfide phases depending on growth conditions. These results and discussions provide a basis for understanding SnSx thin-film growth and points toward future development of phase-selective IV-VI chalcogenide thin-film growth technique.

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• Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International
  

  This is the Accepted Manuscript version of an article accepted for publication in Japanese Journal of Applied Physics. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.35848/1347-4065/adf3be.

Keyword: germanium sulfide

Date published: 2025-08-01

Publisher: IOP Publishing

Journal:

• Japanese Journal of Applied Physics (ISSN: 00214922) vol. 64 issue. 8

Funding:

• JSPS JP20K14796 (GeSn/Ge縦型ヘテロ接合ナノワイヤの実現と次世代トランジスタへの応用)
• JSPS JP21H04642 (Si-Ge系ヘテロ接合ナノワイヤによる縦型ナノワイヤHEMTデバイスの開発)
• JSPS JP23K13370 (光電融合LSIへ向けた絶縁膜上におけるGe系光学材料の結晶成長と光電デバイス応用 )

Manuscript type: Author's version (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.5815

First published URL: https://doi.org/10.35848/1347-4065/adf3be

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Updated at: 2025-10-16 14:01:13 +0900

Published on MDR: 2026-08-11 08:25:49 +0900