Ballistic superconductivity in semiconductor nanowires

Hao Zhang; Önder Gül; Sonia Conesa-Boj; Michał P. Nowak; Michael Wimmer; Kun Zuo; Vincent Mourik; Folkert K. de Vries; Jasper van Veen; Michiel W. A. de Moor; Jouri D. S. Bommer; David J. van Woerkom; Diana Car; Sébastien R Plissard; Erik P.A.M. Bakkers; Marina Quintero-Pérez; Maja C. Cassidy; Sebastian Koelling; Srijit Goswami; Kenji Watanabe; Takashi Taniguchi; Leo P. Kouwenhoven

doi:10.1038/ncomms16025

ジャーナル論文 Ballistic superconductivity in semiconductor nanowires

; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ;

Zhang_et_al-2017-Nature_Communications.pdf

Download file (1.94MB)
Download as zip (1.76MB)

コレクション

引用

Hao Zhang, Önder Gül, Sonia Conesa-Boj, Michał P. Nowak, Michael Wimmer, Kun Zuo, Vincent Mourik, Folkert K. de Vries, Jasper van Veen, Michiel W. A. de Moor, Jouri D. S. Bommer, David J. van Woerkom, Diana Car, Sébastien R Plissard, Erik P.A.M. Bakkers, Marina Quintero-Pérez, Maja C. Cassidy, Sebastian Koelling, Srijit Goswami, Kenji Watanabe, Takashi Taniguchi, Leo P. Kouwenhoven. Ballistic superconductivity in semiconductor nanowires. Nature Communications. 2017, 8 (), 16025. https://doi.org/10.1038/ncomms16025

(BibTeX)

説明:

(abstract)

We show ballistic superconductivity in InSb semiconductor nanowires. Our structural and chemical analyses demonstrate a high-quality interface between the nanowire and a NbTiN superconductor. The high-quality interface enables ballistic transport manifested by a quantized conductance for normal carriers, and a strong enhancement of conductance resulting from Andreev reflection. Gate tuning the device to a tunnel probe reveals an induced hard-gap with a significantly reduced subgap density of states, corroborating the homogeneity of our hybrid interface. These results constitute a substantial improvement in induced superconductivity in semiconductors, and pave the way for disorder-free Majorana devices.

権利情報: