Hao Zhang
;
Önder Gül
;
Sonia Conesa-Boj
;
Michał P. Nowak
;
Michael Wimmer
;
Kun Zuo
;
Vincent Mourik
;
Folkert K. de Vries
;
Jasper van Veen
;
Michiel W. A. de Moor
;
Jouri D. S. Bommer
;
David J. van Woerkom
;
Diana Car
;
Sébastien R Plissard
;
Erik P.A.M. Bakkers
;
Marina Quintero-Pérez
;
Maja C. Cassidy
;
Sebastian Koelling
;
Srijit Goswami
;
Kenji Watanabe
(National Institute for Materials Science
)
;
Takashi Taniguchi
(National Institute for Materials Science
)
;
Leo P. Kouwenhoven
Description:
(abstract)We show ballistic superconductivity in InSb semiconductor nanowires. Our structural and chemical analyses demonstrate a high-quality interface between the nanowire and a NbTiN superconductor. The high-quality interface enables ballistic transport manifested by a quantized conductance for normal carriers, and a strong enhancement of conductance resulting from Andreev reflection. Gate tuning the device to a tunnel probe reveals an induced hard-gap with a significantly reduced subgap density of states, corroborating the homogeneity of our hybrid interface. These results constitute a substantial improvement in induced superconductivity in semiconductors, and pave the way for disorder-free Majorana devices.
Rights:
Keyword: emiconductor nanowires, superconductivity, Majorana mode
Date published: 2017-07-06
Publisher: Springer Science and Business Media LLC
Journal:
Funding:
Manuscript type: Publisher's version (Version of record)
MDR DOI:
First published URL: https://doi.org/10.1038/ncomms16025
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Other identifier(s):
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Updated at: 2025-02-28 08:30:29 +0900
Published on MDR: 2025-02-28 08:30:29 +0900
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