Hao Zhang
;
Önder Gül
;
Sonia Conesa-Boj
;
Michał P. Nowak
;
Michael Wimmer
;
Kun Zuo
;
Vincent Mourik
;
Folkert K. de Vries
;
Jasper van Veen
;
Michiel W. A. de Moor
;
Jouri D. S. Bommer
;
David J. van Woerkom
;
Diana Car
;
Sébastien R Plissard
;
Erik P.A.M. Bakkers
;
Marina Quintero-Pérez
;
Maja C. Cassidy
;
Sebastian Koelling
;
Srijit Goswami
;
Kenji Watanabe
(National Institute for Materials Science
)
;
Takashi Taniguchi
(National Institute for Materials Science
)
;
Leo P. Kouwenhoven
説明:
(abstract)We show ballistic superconductivity in InSb semiconductor nanowires. Our structural and chemical analyses demonstrate a high-quality interface between the nanowire and a NbTiN superconductor. The high-quality interface enables ballistic transport manifested by a quantized conductance for normal carriers, and a strong enhancement of conductance resulting from Andreev reflection. Gate tuning the device to a tunnel probe reveals an induced hard-gap with a significantly reduced subgap density of states, corroborating the homogeneity of our hybrid interface. These results constitute a substantial improvement in induced superconductivity in semiconductors, and pave the way for disorder-free Majorana devices.
権利情報:
キーワード: emiconductor nanowires, superconductivity, Majorana mode
刊行年月日: 2017-07-06
出版者: Springer Science and Business Media LLC
掲載誌:
研究助成金:
原稿種別: 出版者版 (Version of record)
MDR DOI:
公開URL: https://doi.org/10.1038/ncomms16025
関連資料:
その他の識別子:
連絡先:
更新時刻: 2025-02-28 08:30:29 +0900
MDRでの公開時刻: 2025-02-28 08:30:29 +0900
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Zhang_et_al-2017-Nature_Communications.pdf
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サイズ | 1.94MB | 詳細 |