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Solution-processed colloidal III-V semiconductor quantum dot photodiodes (QPDs) have potential applications in SWIR imaging due to their tunable spectral response range, possible multiple-exciton generation, operation at 0-V bias voltage and low-cost fabrication and are also expected to replace lead- and mercury-based counterparts that are hampered by RoHS. However, the use of III-V CQDs as photoactive layers in SWIR optoelectronic applications is still a challenge because of underdeveloped ligand-engineering for improving the in-plane conductivity of the QD assembled film. Here we report on ligand engineering of InSb CQDs to enhance the optical response performance of self-powered SWIR QPDs. Specifically, by replacing oleylamine with sulfide, the interparticle distance between the CQDs was shortened 5.0 ± 0.5 nm to 1.5 ± 0.5 nm, leading to improved carrier mobility for high photoresponse speed to SWIR light.

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• Creative Commons BY Attribution 4.0 International
  

Keyword: Colloidal Quantum dots, Short wavelength infrared photodetector, Near-infrared photodetector, Indium Antimonide, Photodiodes, Nanocrystals

Date published: 2024-03-19

Publisher: Royal Society of Chemistry (RSC)

Journal:

• Nanoscale Horizons (ISSN: 20556756) vol. 9 issue. 5 p. 817-827

Funding:

• Japan Society for the Promotion of Science 21H01910
• Japan Society for the Promotion of Science 21H01743

Manuscript type: Author's version (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4495

First published URL: https://doi.org/10.1039/d4nh00038b

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Updated at: 2024-04-30 12:30:25 +0900

Published on MDR: 2024-04-30 12:30:25 +0900