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Diamond, with its ultra-wide bandgap energy, has emerged as an extreme semiconductor due to its extraordinary electronic and thermal properties. The hydrogen-terminated diamond surface has attracted extensive attention due to its unique p-type surface conductivity. However, the fundamental nature of this p-type conductivity remains incompletely understood using existing surface analysis techniques. In this study, we investigate the dynamic thermal desorption of surface adsorbates on hydrogen-terminated diamond using single-crystal diamond microelectromechanical system (MEMS) resonators, avoiding charging-related issues. By analyzing variations in resonance performance and surface conductivity, we uncover several key findings:(i) The desorption of surface adsorbates reaches saturation at approximately 873 K.(ii) The desorbed mass per unit area is around 2.3 fg/μm², corresponding to an equivalent thickness of approximately 1 nm.(iii) The surface conductivity of hydrogen-terminated diamond can be fully restored even after annealing at 873 K, indicating the thermal stability of C-H bonds.This work offers an alternative insight into the surface properties of hydrogen-terminated diamond, accelerating the development of highly reliable diamond-based electronic devices.

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  This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Keyun Gu, Zilong Zhang, Jian Huang, Yasuo Koide, Satoshi Koizumi, Meiyong Liao; Surface desorption properties of hydrogen-terminated diamond detected by micromechanical resonator. Appl. Phys. Lett. 2 June 2025; 126 (22): 221901 and may be found at https://doi.org/10.1063/5.0274650.

Keyword: Diamond, surface conductivity, MEMS

Date published: 2025-06-02

Publisher: AIP Publishing

Journal:

• Applied Physics Letters (ISSN: 00036951) vol. 126 issue. 22

Funding:

• Japan Society for the Promotion of Science 24H00287

Manuscript type: Author's version (Submitted manuscript)

MDR DOI: https://doi.org/10.48505/nims.5586

First published URL: https://doi.org/10.1063/5.0274650

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Updated at: 2025-07-14 12:30:29 +0900

Published on MDR: 2025-07-14 12:17:15 +0900