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Description:

This study examines the impact of curtain gas flow on metal-organic chemical vapor deposition (MOCVD) growth of two-dimensional (2D) transition metal dichalcogenides using finite element method simulations and growth experiments. The simulation results demonstrate that the curtain gas changes precursor transfer dynamics, concentrates the flow toward the substrate, and potentially lowers contamination from chamber walls. The simulation findings are supported by experimental validation using tungsten and sulfur sources, which confirms that curtain gas flow is critical in enhancing the reproducibility of 2D WS2 growth. The research highlights the need to optimize gas flow dynamics in MOCVD processes to unlock the full potential of 2D materials in future electronic devices.

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• In Copyright
  

  This document is the Accepted Manuscript version of a Published Work that appeared in final form in Crystal Growth & Design, copyright © 2024 American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acs.cgd.4c00477

Keyword: 2D materials, Finite Element Method, Chemical Vapor Deposition

Date published: 2024-07-17

Publisher: American Chemical Society

Journal:

• CRYSTAL GROWTH & DESIGN (ISSN: 15287483) vol. 24 issue. 14 p. 6001-6006

Funding:

Manuscript type: Author's version (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4769

First published URL: https://doi.org/10.1021/acs.cgd.4c00477

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Updated at: 2025-07-08 08:30:18 +0900

Published on MDR: 2025-07-08 08:16:56 +0900