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説明:

This study examines the impact of curtain gas flow on metal-organic chemical vapor deposition (MOCVD) growth of two-dimensional (2D) transition metal dichalcogenides using finite element method simulations and growth experiments. The simulation results demonstrate that the curtain gas changes precursor transfer dynamics, concentrates the flow toward the substrate, and potentially lowers contamination from chamber walls. The simulation findings are supported by experimental validation using tungsten and sulfur sources, which confirms that curtain gas flow is critical in enhancing the reproducibility of 2D WS2 growth. The research highlights the need to optimize gas flow dynamics in MOCVD processes to unlock the full potential of 2D materials in future electronic devices.

権利情報:

• In Copyright
  This document is the Accepted Manuscript version of a Published Work that appeared in final form in Crystal Growth & Design, copyright © 2024 American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acs.cgd.4c00477

キーワード: 2D materials, Finite Element Method, Chemical Vapor Deposition

刊行年月日: 2024-07-17

出版者: American Chemical Society

掲載誌:

• CRYSTAL GROWTH & DESIGN (ISSN: 15287483) vol. 24 issue. 14 p. 6001-6006

研究助成金:

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4769

公開URL: https://doi.org/10.1021/acs.cgd.4c00477

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更新時刻: 2025-07-08 08:30:18 +0900

MDRでの公開時刻: 2025-07-08 08:16:56 +0900