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X-ray diffuse scattering (XDS) is a powerful technique for studying the formation of bulk defects that cause lattice distortions in Czochralski silicon (CZ-Si). To quantitatively analyze oxygen precipitates (OP) in CZ-Si that are below the detection limit of infrared tomography (IR-T), we investigated the relationship between the XDS intensity and the IR-T analysis results obtained from various samples. X-ray rocking curve (XRC) profiles, which included XDS near 400 diffraction peaks on the obliquely polished surface of the CZ-Si wafers, were obtained using a synchrotron radiation X-ray diffractometer. By deriving the XDS-integrated intensities from these XRC profiles, we identified a significant and quantitative relation between the XDS characteristic intensity and the volume density and size of the OPs measured by IR-T. We also find that X-rays scattered from depths below 40 μm contribute to the characteristic intensity of XDS. These results provide critical information for quantitative analysis of OPs using XDS.

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  This is the Accepted Manuscript version of an article accepted for publication in Japanese Journal of Applied Physics. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://dx.doi.org/10.35848/1347-4065/adc0d3.

Keyword: Silicon, X-ray diffuse scattering

Date published: 2025-04-01

Publisher: IOP Publishing

Journal:

• Japanese Journal of Applied Physics (ISSN: 00214922) vol. 64 issue. 4 045502

Funding:

Manuscript type: Author's version (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.5661

First published URL: https://doi.org/10.35848/1347-4065/adc0d3

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Updated at: 2026-02-14 21:58:00 +0900

Published on MDR: 2026-04-08 08:23:37 +0900