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説明:

X-ray diffuse scattering (XDS) is a powerful technique for studying the formation of bulk defects that cause lattice distortions in Czochralski silicon (CZ-Si). To quantitatively analyze oxygen precipitates (OP) in CZ-Si that are below the detection limit of infrared tomography (IR-T), we investigated the relationship between the XDS intensity and the IR-T analysis results obtained from various samples. X-ray rocking curve (XRC) profiles, which included XDS near 400 diffraction peaks on the obliquely polished surface of the CZ-Si wafers, were obtained using a synchrotron radiation X-ray diffractometer. By deriving the XDS-integrated intensities from these XRC profiles, we identified a significant and quantitative relation between the XDS characteristic intensity and the volume density and size of the OPs measured by IR-T. We also find that X-rays scattered from depths below 40 μm contribute to the characteristic intensity of XDS. These results provide critical information for quantitative analysis of OPs using XDS.

権利情報:

• In Copyright
  

  This is the Accepted Manuscript version of an article accepted for publication in Japanese Journal of Applied Physics. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://dx.doi.org/10.35848/1347-4065/adc0d3.

キーワード: Silicon, X-ray diffuse scattering

刊行年月日: 2025-04-01

出版者: IOP Publishing

掲載誌:

• Japanese Journal of Applied Physics (ISSN: 00214922) vol. 64 issue. 4 045502

研究助成金:

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.5661

公開URL: https://doi.org/10.35848/1347-4065/adc0d3

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更新時刻: 2026-02-14 21:58:00 +0900

MDRでの公開時刻: 2026-04-08 08:23:37 +0900