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We theoretically investigated the influence of Fermi-level pinning on contact potential difference (CPD) measurements conducted via Kelvin probe force microscopy (KPFM) on semiconductor surfaces. To systematically modulate the strength of the surface pinning, virtual surface states were introduced within the semiconductor bandgap, and the density of states (DOS) was varied. The numerically simulated CPD values varied depending on the DOS of the surface states, reflecting the magnitude of the surface band bending (surface potential). However, we found that under certain conditions, the CPD values obtained by KPFM deviated from the physical quantities directly associated with the surface potential. Our results provide valuable insights for enhancing the accuracy of KPFM data analysis and interpretation.

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• In Copyright
  

  ©2025 American Physical Society

Keyword: Kelvin probe force microscopy, Simulation, Electrostatic force, Fermi level pinning

Date published: 2025-03-07

Publisher: American Physical Society (APS)

Journal:

• Physical Review B (ISSN: 24699950) vol. 111 issue. 12 125304

Funding:

• Japan Society for the Promotion of Science JP17K06366
• Japan Society for the Promotion of Science JP21H01818
• Japan Society for the Promotion of Science JP24K01367

Manuscript type: Author's version (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.5358

First published URL: https://doi.org/10.1103/physrevb.111.125304

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Updated at: 2025-03-10 16:30:14 +0900

Published on MDR: 2025-03-10 16:30:15 +0900