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説明:

We theoretically investigated the influence of Fermi-level pinning on contact potential difference (CPD) measurements conducted via Kelvin probe force microscopy (KPFM) on semiconductor surfaces. To systematically modulate the strength of the surface pinning, virtual surface states were introduced within the semiconductor bandgap, and the density of states (DOS) was varied. The numerically simulated CPD values varied depending on the DOS of the surface states, reflecting the magnitude of the surface band bending (surface potential). However, we found that under certain conditions, the CPD values obtained by KPFM deviated from the physical quantities directly associated with the surface potential. Our results provide valuable insights for enhancing the accuracy of KPFM data analysis and interpretation.

権利情報:

• In Copyright
  

  ©2025 American Physical Society

キーワード: Kelvin probe force microscopy, Simulation, Electrostatic force, Fermi level pinning

刊行年月日: 2025-03-07

出版者: American Physical Society (APS)

掲載誌:

• Physical Review B (ISSN: 24699950) vol. 111 issue. 12 125304

研究助成金:

• Japan Society for the Promotion of Science JP17K06366
• Japan Society for the Promotion of Science JP21H01818
• Japan Society for the Promotion of Science JP24K01367

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.5358

公開URL: https://doi.org/10.1103/physrevb.111.125304

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更新時刻: 2025-03-10 16:30:14 +0900

MDRでの公開時刻: 2025-03-10 16:30:15 +0900