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Positron annihilation and atom probe tomography were used to study vacancy-type defects and their interaction with oxygen in 100-nm thick NixAl1‒x deposited on a SiO2/Si substrate. For as-deposited Ni0.50Al0.50, (i) monovacancy (V) and divacancy-type defects and (ii) vacancy clusters were found to coexist, and the clusters were estimated to be larger than V10. Although no large change in the size of these vacancies was observed after post-deposition annealing below 500C, the concentration of vacancy clusters decreased as temperature increased. Upon annealing, oxygen diffused mainly through grain boundaries. The oxygen incorporation was enhanced in NixAl1‒x with high Ni content. The consumption of Al by surface oxides under Ni-rich conditions introduced defect-rich regions, and as a result, oxygen incorporation was enhanced likely via vacancy-assisted diffusion. The incorporated oxygen tended to couple with vacancies and form vacancy-oxygen complexes that were stable at 800C annealing.

権利情報:

• In Copyright
  This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Electronic Materials, copyright © 2024 American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acsaelm.4c00877

キーワード: atom probe tomography, positron annihilation

刊行年月日: 2024-07-10

出版者: American Chemical Society (ACS)

掲載誌:

• ACS Applied Electronic Materials (ISSN: 26376113)

研究助成金:

• Ministry of Education, Culture, Sports, Science and Technology JPMXP1223AT5043
• Japan Science and Technology Corporation JPMJAP2321
• Tsukuba Materials Research

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4589

公開URL: https://doi.org/10.1021/acsaelm.4c00877

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更新時刻: 2025-07-10 08:30:19 +0900

MDRでの公開時刻: 2025-07-10 08:15:54 +0900