Kazuya Terabe
;
Takashi Tsuchiya
;
Tohru Tsuruoka
;
Hirofumi Tanaka
;
Ilia Valov
;
James K. Gimzewski
;
Tsuyoshi Hasegawa
説明:
(abstract)Today's scientific and technological growth relies on rapid advances in electronic information technologies. Semiconductor devices such as transistors are essential to these technologies, and they are constantly being improved by being made smaller and more integrated. However, there is a concern that these improvements may slow down in the near future. Thus, creating new types of devices that can overcome the problems and/or enhance the capabilities of traditional semiconductor devices has become an important challenge. In particular, solid-state ionic devices can potentially meet this challenge. In this review, we describe the design of such devices using ionic nanoarchitectonics techniques that locally control ion conduction and electrochemical behavior in ion conductors and mixed conductors. In addition, we describe solid-state ionic devices developed for electronic information technology as well as the electrical, magnetic, optical, and brain-inspired neuromorphic functionalities of these devices.
権利情報:
This is an open access article under the CC BY-NC-ND license
キーワード: Solid-state ionics , Ionic nanoarchitectonics , Atomic switch , Neuromorphic device , Artificial synapse , Physical reservoir Nanoionics
刊行年月日: 2025-08-26
出版者: Elsevier BV
掲載誌:
研究助成金:
原稿種別: 出版者版 (Version of record)
MDR DOI:
公開URL: https://doi.org/10.1016/j.ssi.2025.116995
関連資料:
その他の識別子:
連絡先:
更新時刻: 2025-08-28 08:30:20 +0900
MDRでの公開時刻: 2025-08-28 08:18:04 +0900
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