Kazuya Terabe
;
Takashi Tsuchiya
;
Tohru Tsuruoka
;
Hirofumi Tanaka
;
Ilia Valov
;
James K. Gimzewski
;
Tsuyoshi Hasegawa
Description:
(abstract)Today's scientific and technological growth relies on rapid advances in electronic information technologies. Semiconductor devices such as transistors are essential to these technologies, and they are constantly being improved by being made smaller and more integrated. However, there is a concern that these improvements may slow down in the near future. Thus, creating new types of devices that can overcome the problems and/or enhance the capabilities of traditional semiconductor devices has become an important challenge. In particular, solid-state ionic devices can potentially meet this challenge. In this review, we describe the design of such devices using ionic nanoarchitectonics techniques that locally control ion conduction and electrochemical behavior in ion conductors and mixed conductors. In addition, we describe solid-state ionic devices developed for electronic information technology as well as the electrical, magnetic, optical, and brain-inspired neuromorphic functionalities of these devices.
Rights:
This is an open access article under the CC BY-NC-ND license
Keyword: Solid-state ionics , Ionic nanoarchitectonics , Atomic switch , Neuromorphic device , Artificial synapse , Physical reservoir Nanoionics
Date published: 2025-08-26
Publisher: Elsevier BV
Journal:
Funding:
Manuscript type: Publisher's version (Version of record)
MDR DOI:
First published URL: https://doi.org/10.1016/j.ssi.2025.116995
Related item:
Other identifier(s):
Contact agent:
Updated at: 2025-08-28 08:30:20 +0900
Published on MDR: 2025-08-28 08:18:04 +0900
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