Article Ionic nanoarchitectonics for electronic information devices

Kazuya Terabe SAMURAI ORCID ; Takashi Tsuchiya SAMURAI ORCID ; Tohru Tsuruoka ; Hirofumi Tanaka ; Ilia Valov ; James K. Gimzewski ; Tsuyoshi Hasegawa

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Citation
Kazuya Terabe, Takashi Tsuchiya, Tohru Tsuruoka, Hirofumi Tanaka, Ilia Valov, James K. Gimzewski, Tsuyoshi Hasegawa. Ionic nanoarchitectonics for electronic information devices. Solid State Ionics. 2025, 430 (), 116995. https://doi.org/10.1016/j.ssi.2025.116995

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(abstract)

Today's scientific and technological growth relies on rapid advances in electronic information technologies. Semiconductor devices such as transistors are essential to these technologies, and they are constantly being improved by being made smaller and more integrated. However, there is a concern that these improvements may slow down in the near future. Thus, creating new types of devices that can overcome the problems and/or enhance the capabilities of traditional semiconductor devices has become an important challenge. In particular, solid-state ionic devices can potentially meet this challenge. In this review, we describe the design of such devices using ionic nanoarchitectonics techniques that locally control ion conduction and electrochemical behavior in ion conductors and mixed conductors. In addition, we describe solid-state ionic devices developed for electronic information technology as well as the electrical, magnetic, optical, and brain-inspired neuromorphic functionalities of these devices.

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Keyword: Solid-state ionics , Ionic nanoarchitectonics , Atomic switch , Neuromorphic device , Artificial synapse , Physical reservoir Nanoionics

Date published: 2025-08-26

Publisher: Elsevier BV

Journal:

  • Solid State Ionics (ISSN: 01672738) vol. 430 116995

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Manuscript type: Publisher's version (Version of record)

MDR DOI:

First published URL: https://doi.org/10.1016/j.ssi.2025.116995

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Updated at: 2025-08-28 08:30:20 +0900

Published on MDR: 2025-08-28 08:18:04 +0900

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