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説明:

Gate-voltage dependent quantum oscillations in topological insulator Sn0.02 Bi 1.08Sb 0.9 Te 2 S (Sn-BSTS) are analyzed on the basis of the Lifshitz-Kosevich theory. The angular dependence of the quantum oscillations and Landau-level fan diagram analysis show that the quantum oscillations originate from topological surface states with the Berry phase of \pi. Gate-voltage control allows precise control of the Fermi energy, and a very weak energy dependence of the relaxation time s of the topological surface states is revealed. By a simple algebraic argument using the linear response theory, it is shown that the weak energy dependence of s validates the constant relaxation time approximation [τ(Ε,Τ) =τ 0 ] in the calculation of the Seebeck coefficient S and zT_el.

権利情報:

• In Copyright
  This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Yuya Hattori, Takako Konoike, Shinya Uji, Yuki Tokumoto, Keiichi Edagawa, Taichi Terashima; Validity of the constant relaxation time approximation in topological insulator: Sn-BSTS a case study. Appl. Phys. Lett. 19 August 2024; 125 (8): 083102 and may be found at https://doi.org/10.1063/5.0215841.

キーワード: トポロジカル絶縁体, 熱電材料

刊行年月日: 2024-08-19

出版者: AIP Publishing

掲載誌:

• Applied Physics Letters (ISSN: 00036951) vol. 125 issue. 8 083102

研究助成金:

• Japan Society for the Promotion of Science JP21K20496
• Japan Society for the Promotion of Science JP22K14467
• Japan Society for the Promotion of Science JP22H01765
• Japan Society for the Promotion of Science JP22H01173

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4742

公開URL: https://doi.org/10.1063/5.0215841

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更新時刻: 2024-09-12 16:30:40 +0900

MDRでの公開時刻: 2024-09-12 16:30:40 +0900