Yuya Hattori
(National Institute for Materials Science)
;
Takako Konoike
(National Institute for Materials Science)
;
Shinya Uji
(National Institute for Materials Science)
;
Yuki Tokumoto
;
Keiichi Edagawa
;
Taichi Terashima
(National Institute for Materials Science)
Description:
(abstract)Gate-voltage dependent quantum oscillations in topological insulator Sn0.02 Bi 1.08Sb 0.9 Te 2 S (Sn-BSTS) are analyzed on the basis of the Lifshitz-Kosevich theory. The angular dependence of the quantum oscillations and Landau-level fan diagram analysis show that the quantum oscillations originate from topological surface states with the Berry phase of \pi. Gate-voltage control allows precise control of the Fermi energy, and a very weak energy dependence of the relaxation time s of the topological surface states is revealed. By a simple algebraic argument using the linear response theory, it is shown that the weak energy dependence of s validates the constant relaxation time approximation [τ(Ε,Τ) =τ 0 ] in the calculation of the Seebeck coefficient S and zT_el.
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Date published: 2024-08-19
Publisher: AIP Publishing
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Manuscript type: Author's version (Accepted manuscript)
MDR DOI: https://doi.org/10.48505/nims.4742
First published URL: https://doi.org/10.1063/5.0215841
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Updated at: 2024-09-12 16:30:40 +0900
Published on MDR: 2024-09-12 16:30:40 +0900
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