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We have carried out the Auger depth profiling analysis of GaAs/AIAs multilayer structure using the peaks of GaMVV and A1LVV. Since the two peaks of the specimen overlapped each other, we made peak separation with peak synthesis technique using a non-negative least-square curve fit containing a peak-shift correction. The top-hat filtered spectra were used for the calculation to remove their background. This procedure gave excellent results for the peak separation especially for the sample which had a large difference in elemental concentration.

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Keyword: peak separation, non-negative least-square curve fit, Auger depth profiling analysis, GaAs/AlAs multilayer

Date published: 2011-06-10

Publisher: Surface Science Society of Japan

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Manuscript type: Author's version (Submitted manuscript)

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First published URL: https://doi.org/10.1380/jsssj.13.10_606

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Updated at: 2022-10-03 01:51:43 +0900

Published on MDR: 2021-11-16 19:30:53 +0900