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説明:

We have carried out the Auger depth profiling analysis of GaAs/AIAs multilayer structure using the peaks of GaMVV and A1LVV. Since the two peaks of the specimen overlapped each other, we made peak separation with peak synthesis technique using a non-negative least-square curve fit containing a peak-shift correction. The top-hat filtered spectra were used for the calculation to remove their background. This procedure gave excellent results for the peak separation especially for the sample which had a large difference in elemental concentration.

権利情報:

キーワード: peak separation, non-negative least-square curve fit, Auger depth profiling analysis, GaAs/AlAs multilayer

刊行年月日: 2011-06-10

出版者: Surface Science Society of Japan

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研究助成金:

原稿種別: 査読前原稿 (Author's original)

MDR DOI:

公開URL: https://doi.org/10.1380/jsssj.13.10_606

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更新時刻: 2022-10-03 01:51:43 +0900

MDRでの公開時刻: 2021-11-16 19:30:53 +0900