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説明:

Low–dielectric constant (low-k) interlayer dielectrics (ILDs) are necessary to reduce signal propagation delay and electronic crosstalk in advanced very large–scale integration (VLSI) circuits. The thermal conductivity of low-k ILDs substantially influences the temperature rise of VLSI interconnects, which in turn affects the performance and reliability of VLSI circuits. Furthermore, as the technology node is scaled, the thermal boundary resistance (TBR) between wires and low-k ILDs becomes increasingly critical for thermal management in VLSI interconnects. In this study, we experimentally investigated the thermal conductivities and TBRs of methylpolysiloxane-based low-k ILDs. The results showed that although a 5% increase in the methyl content minimally affected the thermal conductivity, it substantially increased the TBR, while curing enhanced both the thermal conductivity and TBR. Persistent homology analysis was performed on the transmission electron microscopy images of the low-k ILDs to extract hidden structural features and quantify the medium-range order, which further elucidated the mechanisms underlying the thermal conductivity modification. Our findings offer insights into thermal transport in low-k ILDs and at interfaces, which are both essential for developing next-generation thermally conductive low-k ILDs and composite thermal interface materials for thermal management in VLSI circuits.

権利情報:

• In Copyright
  

  This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Electronic Materials, copyright © 2025 American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acsaelm.5c01142.

キーワード: thermal conductivity, thermal boundary resistance, low-k dielectrics, VLSI interconnects, persistent homology

刊行年月日: 2025-09-23

出版者: American Chemical Society (ACS)

掲載誌:

• ACS Applied Electronic Materials (ISSN: 26376113) vol. 7 issue. 18 p. 8428-8439

研究助成金:

• Japan Society for the Promotion of Science 21K04886

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.6061

公開URL: https://doi.org/10.1021/acsaelm.5c01142

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更新時刻: 2026-04-30 12:01:11 +0900

MDRでの公開時刻: 2026-09-02 08:25:14 +0900