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説明:

半導体バリアCuInSe2、CuGaSe2を持つ磁気トンネル接合の伝導特性を第一原理計算によって調べた。その結果、両トンネル接合でΔ1状態の波動関数のコヒーレントトンネル現象が生じ、高いMR比が得られることが分かった。

権利情報:

• In Copyright
  

  © 2017 The Japan Society of Applied Physics
  
  
  This is an author-created, un-copyedited version of an article accepted for publication/published
  in Japanese Journal of Applied Physics. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.7567/jjap.56.020306.

キーワード: Tunnel magnetoresistance, Magnetic tunnel junction, Spintronics

刊行年月日: 2017-02-01

出版者: Japan Society of Applied Physics

掲載誌:

• Japanese Journal of Applied Physics (ISSN: 13474065) vol. 56 issue. 2 020306

研究助成金:

• Japan Society for the Promotion of Science 16H06332
• Japan Society for the Promotion of Science 16H03852
• Japan Science and Technology Agency 2014-PM04-17-01

原稿種別: 著者最終稿 (Accepted manuscript)

MDR DOI: https://doi.org/10.48505/nims.4481

公開URL: https://doi.org/10.7567/jjap.56.020306

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更新時刻: 2024-04-11 16:30:26 +0900

MDRでの公開時刻: 2024-04-11 16:30:26 +0900